PLANAR INP-INGAAS AVALANCHE PHOTODETECTORS WITH N- MULTIPLICATION LAYER EXHIBITING A VERY HIGH GAIN-BANDWIDTH PRODUCT

被引：29

作者：

TAROF, LE

机构：

[1] Bell-Northern Research Ltd., Ottawa

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 09期

关键词：

D O I：

10.1109/68.59337

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A planar separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiode (APD) structure was designed and fabricated, allowing for an undoped multiplication layer without the use of guard rings. A very high gain-bandwidth (GBW) product of 93 GHz and dc gains exceeding 1000 have been measured for a 30 μm diameter device. This GBW is to the author's knowledge the highest reported to date in any III-V APD. In principle, the useful gain-bandwidth product of SAGCM structures is not limited by the tunneling limit in the InP avalanche region of 140 GHz for conventional separate absorption, grading, and multiplication (SAGM) structures. © 1990 IEEE

引用

收藏

页码：643 / 646

页数：4

相关论文

共 12 条

[1] INP/INGAASP/INGAAS AVALANCHE PHOTODIODES WITH 70 GHZ GAIN-BANDWIDTH PRODUCT [J].

CAMPBELL, JC ;

TSANG, WT ;

QUA, GJ ;

BOWERS, JE .

APPLIED PHYSICS LETTERS, 1987, 51 (18) :1454-1456

[2]

CAPASSO F, 1985, LIGHTWAVE COMMUNIC D, pCH1

[3] METALORGANIC CHEMICAL VAPOR-DEPOSITION INGAAS P-I-N PHOTODIODES WITH EXTREMELY LOW DARK CURRENT [J].

GALLANT, M ;

PUETZ, N ;

ZEMEL, A ;

SHEPHERD, FR .

APPLIED PHYSICS LETTERS, 1988, 52 (09) :733-735

[4] LONG MINORITY HOLE DIFFUSION LENGTH AND EVIDENCE FOR BULK RADIATIVE RECOMBINATION LIMITED LIFETIME IN INP/INGAAS/INP DOUBLE HETEROSTRUCTURES [J].

GALLANT, M ;

ZEMEL, A .

APPLIED PHYSICS LETTERS, 1988, 52 (20) :1686-1688

[5]

HOLLENHORST JN, 1988, SPIE HIGH FREQUENCY, V995

[6] HIGH-SPEED DISTRIBUTED FEEDBACK LASERS AND INGAAS AVALANCHE PHOTODIODES [J].

IMAI, H ;

KANEDA, T .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1988, 6 (11) :1634-1642

[7] SIMPLE, VERY LOW DARK CURRENT, PLANAR LONG-WAVELENGTH AVALANCHE PHOTODIODE [J].

LIU, Y ;

FORREST, SR ;

BAN, VS ;

WOODRUFF, KM ;

COLOSI, J ;

ERIKSON, GC ;

LANGE, MJ ;

OLSEN, GH .

APPLIED PHYSICS LETTERS, 1988, 53 (14) :1311-1313

[8] NEW APPROACH TO THE FREQUENCY-RESPONSE ANALYSIS OF AN INGAAS AVALANCHE PHOTODIODE [J].

SHIBA, T ;

ISHIMURA, E ;

TAKAHASHI, K ;

NAMIZAKI, H ;

SUSAKI, W .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1988, 6 (10) :1502-1506

[9] PLANAR-STRUCTURE INP/INGAASP/INGAAS AVALANCHE PHOTODIODES WITH PREFERENTIAL LATERAL EXTENDED GUARD RING FOR 1.0-1.6 MU-M WAVELENGTH OPTICAL COMMUNICATION USE [J].

TAGUCHI, K ;

TORIKAI, T ;

SUGIMOTO, Y ;

MAKITA, K ;

ISHIHARA, H .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1988, 6 (11) :1643-1655

[10]

TAROF LE, 1990, APPL PHYS LETT 0813