METALORGANIC CHEMICAL VAPOR-DEPOSITION INGAAS P-I-N PHOTODIODES WITH EXTREMELY LOW DARK CURRENT

被引：26

作者：

GALLANT, M

PUETZ, N

ZEMEL, A

SHEPHERD, FR

机构：

来源：

关键词：

D O I：

10.1063/1.99363

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：733 / 735

页数：3

共 12 条

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[9] EXTREMELY UNIFORM GROWTH OF GAAS AND GAALAS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION ON 3-INCH GAAS SUBSTRATES
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[10] A GA0.47IN0.53AS-INP HETEROPHOTODIODE WITH REDUCED DARK CURRENT
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