EXTREMELY UNIFORM GROWTH OF GAAS AND GAALAS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION ON 3-INCH GAAS SUBSTRATES

被引：17

作者：

OKAMOTO, A

SUNAKAWA, H

TERAO, H

WATANABE, H

机构：

来源：

关键词：

D O I：

10.1016/0022-0248(84)90259-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：140 / 144

页数：5

共 9 条

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[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 58 - 63
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