EFFECT OF INSULATOR SURFACE ON SELECTIVE DEPOSITION OF CVD TUNGSTEN FILMS

[1] BEINGLASS I, COMMUNICATION

[2] SELECTIVE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (06) : 1427 - 1433

[3] NUCLEATION OF CVD SILICON ON SIO2 AND SI3N4 SUBSTRATES .1. SIH4-HCL-H2 SYSTEM AT HIGH-TEMPERATURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) : 194 - 202

[4] THE NUCLEATION OF CVD SILICON ON SIO2 AND SI3N4 SUBSTRATES .2. THE SIH2CL2-H2-N2 SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : 1836 - 1843

[5] CUOMO JJ, 1972, 3RD P INT C CHEM VAP, P270

[6] MILLER NE, 1982, SOLID STATE TECHNOL, V25, P85

[7] SARASWAT KC, 1984, ELECTROCHEMICAL SOC, P409

[1] BEINGLASS I, COMMUNICATION

[2] SELECTIVE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (06) : 1427 - 1433

[3] NUCLEATION OF CVD SILICON ON SIO2 AND SI3N4 SUBSTRATES .1. SIH4-HCL-H2 SYSTEM AT HIGH-TEMPERATURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) : 194 - 202

[4] THE NUCLEATION OF CVD SILICON ON SIO2 AND SI3N4 SUBSTRATES .2. THE SIH2CL2-H2-N2 SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : 1836 - 1843

[5] CUOMO JJ, 1972, 3RD P INT C CHEM VAP, P270

[6] MILLER NE, 1982, SOLID STATE TECHNOL, V25, P85

[7] SARASWAT KC, 1984, ELECTROCHEMICAL SOC, P409