CAPPED NANOMETER SILICON ELECTRONIC MATERIALS

被引：37

作者：

BRUS, L

机构：

[1] AT and T Bell Laboratories, Murray Hill, NJ 07974-0636

来源：

ADVANCED MATERIALS | 1993年 / 5卷 / 04期

关键词：

D O I：

10.1002/adma.19930050414

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Research News: New properties, structures, and concepts in solid silicon materials have been glimpsed in several experiments. In addition to the recent systematic effort to use organometallic chemical methods to make and characterize free-standing ''capped'' crystallites or quantum dots-the figure shows one structure of a capped polysilyne oligomer-new chemical approaches to capped nanometer silicon micelles, puckered sheets, clusters and crystallites are presented.

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页码：286 / 288

页数：3

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