DESIGN AND PERFORMANCE OF AN AMPLIFIER FOR EBIC IMAGING IN A SCANNING ELECTRON-MICROSCOPE

被引：5

作者：

MAHER, FJ

ROSSOUW, CJ

机构：

来源：

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS | 1983年 / 16卷 / 12期

关键词：

D O I：

10.1088/0022-3735/16/12/027

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：1238 / 1241

页数：4

共 13 条

[1] OBSERVATIONS OF DISLOCATIONS AND JUNCTION IRREGULARITIES IN BIPOLAR-TRANSISTORS USING THE EBIC MODE OF THE SCANNING ELECTRON-MICROSCOPE [J].

ASHBURN, P ;

BULL, CJ .

SOLID-STATE ELECTRONICS, 1979, 22 (01) :105-110

[2] HIGH-SPEED CURRENT MEASUREMENTS [J].

CATH, PG ;

PEABODY, AM .

ANALYTICAL CHEMISTRY, 1971, 43 (11) :A91-&

[3]

EHRENBERG W, 1981, ELECTRON BOMBARDMENT, P294

[4] DETERMINATION OF KILOVOLT ELECTRON ENERGY DISSIPATION VS PENETRATION DISTANCE IN SOLID MATERIALS [J].

EVERHART, TE ;

HOFF, PH .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) :5837-&

[5]

GEDCKE DA, 1978, SCANNING ELECTRON MI, V1, P581

[6]

Gonzales A. J., 1974, Scanning Electron Microscopy 1974, P941

[7]

LEAMY HJ, 1978, SCANNING ELECTRON MI, V1, P717

[8] ELECTRON-BEAM-INDUCED CURRENT INVESTIGATIONS OF CW LASER-ANNEALED SILICON [J].

MIZUTA, M ;

SHENG, NH ;

MERZ, JL ;

LIETOILA, A ;

GOLD, RB ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :154-156

[9]

MOTCHENBACHER CD, 1973, LOW NOISE ELECTRONIC, P10

[10] ELECTRICAL RECOMBINATION EFFICIENCY OF INDIVIDUAL EDGE DISLOCATIONS AND STACKING-FAULT DEFECTS IN N-TYPE SILICON [J].

OURMAZD, A ;

BOOKER, GR .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 55 (02) :771-784

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