ELECTRON-BEAM-INDUCED CURRENT INVESTIGATIONS OF CW LASER-ANNEALED SILICON

被引：20

作者：

MIZUTA, M ^{[1
]}

SHENG, NH ^{[1
]}

MERZ, JL ^{[1
]}

LIETOILA, A ^{[1
]}

GOLD, RB ^{[1
]}

GIBBONS, JF ^{[1
]}

机构：

[1] STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 02期

关键词：

D O I：

10.1063/1.91805

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：154 / 156

页数：3

共 12 条

[1] CW ARGON-LASER ANNEALING OF ION-IMPLANTED SILICON [J].

AUSTON, DH ;

GOLOVCHENKO, JA ;

SMITH, PR ;

SURKO, CM ;

VENKATESAN, TNC .

APPLIED PHYSICS LETTERS, 1978, 33 (06) :539-541

[2] DETERMINATION OF KILOVOLT ELECTRON ENERGY DISSIPATION VS PENETRATION DISTANCE IN SOLID MATERIALS [J].

EVERHART, TE ;

HOFF, PH .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) :5837-&

[3] LASER-SCANNING APPARATUS FOR ANNEALING OF ION-IMPLANTATION DAMAGE IN SEMICONDUCTORS [J].

GAT, A ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1978, 32 (03) :142-144

[4] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON [J].

GAT, A ;

GIBBONS, JF ;

MAGEE, TJ ;

PENG, J ;

DELINE, VR ;

WILLIAMS, P ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1978, 32 (05) :276-278

[5]

Hess L. D., 1979, Proceedings of the Society of Photo-Optical Instrumentation Engineers, V198, P31

[6] ELECTRONIC DEFECT LEVELS IN SELF-IMPLANTED CW LASER-ANNEALED SILICON [J].

JOHNSON, NM ;

GOLD, RB ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1979, 34 (10) :704-706

[7]

KIMERLING LC, 1977, SEMICONDUCTOR SILICO, P468

[8]

LEAMY HJ, 1978, AIP C P, V50, P556

[9] SOLID SOLUBILITY OF AS IN SI AS DETERMINED BY ION-IMPLANTATION AND CW LASER ANNEALING [J].

LIETOILA, A ;

GIBBONS, JF ;

MAGEE, TJ ;

PENG, J ;

HONG, JD .

APPLIED PHYSICS LETTERS, 1979, 35 (07) :532-534

[10] ELECTRON-BEAM MEASUREMENTS OF MINORITY-CARRIER LIFETIME DISTRIBUTIONS IN ION-BEAM-DAMAGED SILICON [J].

POSSIN, GE ;

KIRKPATRICK, CG .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :4033-4041

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