TRANSIENT REFLECTIVITY MEASUREMENTS AND HEAT-TRANSFER MODELING IN LASER ANNEALING OF SEMICONDUCTOR-FILMS

被引：7

作者：

GRIGOROPOULOS, CP ^{[1
]}

ROSTAMI, AA ^{[1
]}

XU, X ^{[1
]}

TAYLOR, SL ^{[1
]}

PARK, HK ^{[1
]}

机构：

[1] ISFAHAN UNIV TECHNOL,DEPT MECH ENGN,ESFAHAN,IRAN

来源：

INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER | 1993年 / 36卷 / 05期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/S0017-9310(05)80091-2

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

Melting and solidification of a silicon film by continuous wave laser beam irradiation has been studied. The silicon film melting and recrystallization is controlled by the temperature distribution in the semiconductor. Numerical calculations have been carried out for a range of laser beam parameters and material translational speeds. The results for the melt pool size have been compared with experimental data. The temperature field development has also been monitored with localized reflectivity measurements. Experimental and predicted transient reflectivity distributions have been compared.

引用

页码：1219 / 1229

页数：11

共 27 条

[1]

Atthey D, 1974, J I MATHS APPLICS, V13, P353

[2] OPTICAL-PROPERTIES OF LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON OVER THE ENERGY-RANGE 3.0-EV-6.0-EV [J].