EXPERIMENTAL AND COMPUTATIONAL ANALYSIS OF LASER MELTING OF THIN SILICON FILMS

被引：6

作者：

GRIGOROPOULOS, CP ^{[1
]}

DUTCHER, WE ^{[1
]}

EMERY, AF ^{[1
]}

机构：

[1] UNIV WASHINGTON,DEPT MECH ENGN,SEATTLE,WA 98195

来源：

JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME | 1991年 / 113卷 / 01期

关键词：

LASER PROCESSING; MATERIALS PROCESSING AND MANUFACTURING PROCESSES; PHASE-CHANGE PHENOMENA;

D O I：

10.1115/1.2910528

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

Recrystallization of thin semiconductor films can yield improved electrical and crystalline properties. The recrystallization is often effected by using a laser source to melt the semiconductor that has been deposited on an amorphous insulating substrate. This paper describes detailed experimental observations of the associated phase-change process. A computational conductive heat transfer model is presented. The numerical predictions are compared to the experimental results and good agreement is obtained.

引用

页码：21 / 29

页数：9

共 29 条

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Atthey D, 1974, J I MATHS APPLICS, V13, P353

[2]

BORN M, 1970, PRINCIPLES OPTICS, P55

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