HEAT-TRANSFER IN THIN SILICON FILM MELTING BY LASER LINE SOURCES

Optical melting and recrystallization of thin semiconductor films on amorphous insulators is of importance to semiconductor technology since it can lead to the development of high speed electronic devices. The degree of improvement is affected by the rates of melting and recrystallization. To control these aspects, it is necessary to analyze the heat transfer in both the silicon layer and the insulating substrate. This paper describes numerical predictions based upon an enthalpy approach. The numerical predictions are compared to a limited set of experimental data. © 1990.