A HEAT-TRANSFER ALGORITHM FOR THE LASER-INDUCED MELTING AND RECRYSTALLIZATION OF THIN SILICON LAYERS

被引：31

作者：

GRIGOROPOULOS, CP

BUCKHOLZ, RH

DOMOTO, GA

机构：

[1] COLUMBIA UNIV,DEPT MECH ENGN,NEW YORK,NY 10027

[2] XEROX CORP,PALO ALTO RES CTR,MECH ENGN SCI,N TARRYTOWN,NY 10591

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 07期

关键词：

D O I：

10.1063/1.337139

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2304 / 2309

页数：6

共 20 条

[1]

Atthey D, 1974, J I MATHS APPLICS, V13, P353

[2]

Born M, 1980, PRINCIPLES OPTICS

[3] LASER-INDUCED MELT DYNAMICS OF SI AND SILICA [J].

BOSCH, MA ;

LEMONS, RA .

PHYSICAL REVIEW LETTERS, 1981, 47 (16) :1151-1155

[4] TEMPERATURE DISTRIBUTIONS PRODUCED IN A 2-LAYER STRUCTURE BY A SCANNING CW LASER OR ELECTRON-BEAM [J].

BURGENER, ML ;

REEDY, RE .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) :4357-4363

[5]

Douglas J., 1964, NUMER MATH, V6, P428

[6] THE ROLE OF REFLECTIVITY CHANGE IN OPTICALLY INDUCED RECRYSTALLIZATION OF THIN SILICON FILMS [J].

GRIGOROPOULOS, CP ;

BUCKHOLZ, RH ;

DOMOTO, GA .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) :454-458

[7]

GRIGOROPOULOS CP, UNPUB J HEAT TRANSFE

[8] ORIGIN OF LAMELLAE IN RADIATIVELY MELTED SILICON FILMS [J].

HAWKINS, WG ;

BIEGELSEN, DK .

APPLIED PHYSICS LETTERS, 1983, 42 (04) :358-360

[9] INSTABILITY IN RADIATIVELY MELTED SILICON FILMS [J].

JACKSON, KA ;

KURTZE, DA .

JOURNAL OF CRYSTAL GROWTH, 1985, 71 (02) :385-390

[10]

JELISSON GE, 1983, PHYS REV B, V27, P7466

← 1 2 →