THE ROLE OF REFLECTIVITY CHANGE IN OPTICALLY INDUCED RECRYSTALLIZATION OF THIN SILICON FILMS

被引：26

作者：

GRIGOROPOULOS, CP ^{[1
]}

BUCKHOLZ, RH ^{[1
]}

DOMOTO, GA ^{[1
]}

机构：

[1] XEROX PALO ALTO RES CTR,MECH ENGN SCI,N TARRYTOWN,NY 10591

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 02期

关键词：

HEAT SINKS - LASER BEAMS - Effects - LIGHT - Reflection - SEMICONDUCTING FILMS - Radiation Effects - SILICON AND ALLOYS - Recrystallization;

D O I：

10.1063/1.336652

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper we study a simplified model of the fundamental mechanisms governing the radiatively induced recrystallization of a thin polysilicon layer on a heat-sink structure. It has been observed that instabilities in laser induced crystal growth on thin polysilicon layers do occur. To study these solidification instabilities we use a linear stability analysis. The reflectivity difference between the liquid and the solid phases is shown to be a source of thermal instability.

引用

页码：454 / 458

页数：5

共 16 条

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