TEMPERATURE-DEPENDENCE OF THE REFLECTANCE OF SOLID AND LIQUID SILICON

[1] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 437 - 440

[2] CALCULATED TEMPERATURE DISTRIBUTION DURING LASER ANNEALING IN SILICON AND CADMIUM TELLURIDE [J]. APPLIED PHYSICS, 1979, 19 (03): : 313 - 319

[3] REFLECTIVITY ENHANCEMENT OF SEMICONDUCTORS BY Q-SWITCHED RUBY LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (13) : 6032 - +

[4] SOME FEATURES OF LASER ANNEALING OF IMPLANTED SILICON LAYERS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (3-4): : 225 - 233

[5] LAMPERT MA, UNPUBLISHED

[6] TRANSIENT OPTICAL REFLECTIVITY STUDY OF LASER ANNEALING OF ION-IMPLANTED SILICON - THRESHOLDS AND KINETICS [J]. APPLIED PHYSICS LETTERS, 1979, 34 (06) : 363 - 365

[7] OPTICAL HEATING IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1980, 21 (04): : 1559 - 1568

[8] TIME-DEPENDENCE OF THE REFLECTIVITY OF SI AT 633 AND 488 NM DURING PULSED LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 512 - 513

[9] Shvarev K. M., 1975, Soviet Physics - Solid State, V16, P2111

[10] REFLECTIVITY OF METALS AT HIGH-TEMPERATURES [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) : 2376 - &

[1] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 437 - 440

[2] CALCULATED TEMPERATURE DISTRIBUTION DURING LASER ANNEALING IN SILICON AND CADMIUM TELLURIDE [J]. APPLIED PHYSICS, 1979, 19 (03): : 313 - 319

[3] REFLECTIVITY ENHANCEMENT OF SEMICONDUCTORS BY Q-SWITCHED RUBY LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (13) : 6032 - +

[4] SOME FEATURES OF LASER ANNEALING OF IMPLANTED SILICON LAYERS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (3-4): : 225 - 233

[5] LAMPERT MA, UNPUBLISHED

[6] TRANSIENT OPTICAL REFLECTIVITY STUDY OF LASER ANNEALING OF ION-IMPLANTED SILICON - THRESHOLDS AND KINETICS [J]. APPLIED PHYSICS LETTERS, 1979, 34 (06) : 363 - 365

[7] OPTICAL HEATING IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1980, 21 (04): : 1559 - 1568

[8] TIME-DEPENDENCE OF THE REFLECTIVITY OF SI AT 633 AND 488 NM DURING PULSED LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 512 - 513

[9] Shvarev K. M., 1975, Soviet Physics - Solid State, V16, P2111

[10] REFLECTIVITY OF METALS AT HIGH-TEMPERATURES [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) : 2376 - &