TIME-DEPENDENCE OF THE REFLECTIVITY OF SI AT 633 AND 488 NM DURING PULSED LASER ANNEALING

被引：24

作者：

NATHAN, MI

HODGSON, RT

YOFFA, EJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 07期

关键词：

D O I：

10.1063/1.91588

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：512 / 513

页数：2

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共 9 条

[1] DYNAMICS OF Q-SWITCHED LASER ANNEALING
AUSTON, DH
GOLOVCHENKO, JA
SIMONS, AL
SURKO, CM
VENKATESAN, TNC
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (11) : 777 - 779
[2] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS
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[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 788 - 797
[3] SOME FEATURES OF LASER ANNEALING OF IMPLANTED SILICON LAYERS
KHAIBULLIN, IB
SHTYRKOV, EI
ZARIPOV, MM
BAYAZITOV, RM
GALJAUTDINOV, MF
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (3-4): : 225 - 233
[4] COMPUTER-SIMULATION OF LASER ANNEALING SILICON AT 1.06 MU-M
SCHULTZ, JC
COLLINS, RJ
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (01) : 84 - 87
[5] CALCULATION OF THE DYNAMICS OF SURFACE MELTING DURING LASER ANNEALING
SURKO, CM
SIMONS, AL
AUSTON, DH
GOLOVCHENKO, JA
SLUSHER, RE
VENKATESAN, TNC
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (10) : 635 - 637
[6] REASONS TO BELIEVE PULSED LASER ANNEALING OF SI DOES NOT INVOLVE SIMPLE THERMAL MELTING
VANVECHTEN, JA
TSU, R
SARIS, FW
HOONHOUT, D
[J]. PHYSICS LETTERS A, 1979, 74 (06) : 417 - 421
[7] NONTHERMAL PULSED LASER ANNEALING OF SI - PLASMA ANNEALING
VANVECHTEN, JA
TSU, R
SARIS, FW
[J]. PHYSICS LETTERS A, 1979, 74 (06) : 422 - 426
[8] THEORETICAL-ANALYSIS OF THERMAL AND MASS-TRANSPORT IN ION-IMPLANTED LASER-ANNEALED SILICON
WANG, JC
WOOD, RF
PRONKO, PP
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 455 - 458
[9] LASER ANNEALING OF ION-IMPLANTED SEMICONDUCTORS
WHITE, CW
NARAYAN, J
YOUNG, RT
[J]. SCIENCE, 1979, 204 (4392) : 461 - 468