CALCULATION OF THE DYNAMICS OF SURFACE MELTING DURING LASER ANNEALING

被引：80

作者：

SURKO, CM ^{[1
]}

SIMONS, AL ^{[1
]}

AUSTON, DH ^{[1
]}

GOLOVCHENKO, JA ^{[1
]}

SLUSHER, RE ^{[1
]}

VENKATESAN, TNC ^{[1
]}

机构：

[1] BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 10期

关键词：

D O I：

10.1063/1.90619

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a thermal transport model to describe the melting and resolidification of semiconductors which is observed to occur during annealing with a pulsed laser. The temperature-dependent properties of both the solid and liquid are included. We compare this calculation with experimental results for the time duration of the melted surface for crystalline Si and Ge. The temperature of the liquid surface as a function of time is calculated and effects associated with the hot liquid and the vapor are also discussed.

引用

页码：635 / 637

页数：3

共 15 条

[1] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J].