THE TEMPERATURE-DEPENDENCE OF THE REFRACTIVE-INDEX OF SILICON AT ELEVATED-TEMPERATURES AT SEVERAL LASER WAVELENGTHS

被引：129

作者：

JELLISON, GE

BURKE, HH

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 02期

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D O I：

10.1063/1.337386

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：841 / 843

页数：3

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[4] OPTICAL-CONSTANTS FOR SILICON AT 300-K AND 10-K DETERMINED FROM 1.64-EV TO 4.73-EV BY ELLIPSOMETRY
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MODINE, FA
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) : 3745 - 3753
[5] JELLISON GE, 1982, APPL PHYS LETT, V41, P180, DOI 10.1063/1.93454
[6] REFRACTIVE-INDEX OF SILICON AND GERMANIUM AND ITS WAVELENGTH AND TEMPERATURE DERIVATIVES
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[J]. JOURNAL OF PHYSICAL AND CHEMICAL REFERENCE DATA, 1980, 9 (03) : 561 - 658