THE EFFECT OF MIXING HYDROGEN WITH SILANE ON THE ELECTRONIC AND OPTICAL-PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON THIN-FILMS

被引:12
作者
CHAUDHURI, P
RAY, S
BARUA, AK
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D O I
10.1016/0040-6090(84)90468-1
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:261 / 270
页数:10
相关论文
共 17 条
[1]   TRANSPORT-PROPERTIES OF A-SI - H ALLOYS PREPARED BY RF SPUTTERING-I [J].
ANDERSON, DA ;
PAUL, W .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 44 (02) :187-213
[2]  
BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556
[3]   RECENT DEVELOPMENTS IN AMORPHOUS-SILICON SOLAR-CELLS [J].
CARLSON, DE .
SOLAR ENERGY MATERIALS, 1980, 3 (04) :503-518
[4]   OPTICAL-CONSTANTS OF RF SPUTTERED HYDROGENATED AMORPHOUS SI [J].
FREEMAN, EC ;
PAUL, W .
PHYSICAL REVIEW B, 1979, 20 (02) :716-728
[5]   CHARACTERIZATION OF GLOW-DISCHARGE DEPOSITED A-SI-H [J].
FRITZSCHE, H .
SOLAR ENERGY MATERIALS, 1980, 3 (04) :447-501
[6]   INFLUENCE OF SPUTTERING CONDITIONS ON H CONTENT AND SI-H BONDING IN A-SI-H ALLOYS [J].
MARTIN, PM ;
PAWLEWICZ, WT .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1981, 45 (01) :15-27
[7]   GLOW-DISCHARGE A-SI1-XCX - H FILMS STUDIED BY ELECTRON-SPIN-RESONANCE AND IR MEASUREMENTS [J].
MORIMOTO, A ;
MIURA, T ;
KUMEDA, M ;
SHIMIZU, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (02) :L119-L121
[8]   PREPARATION OF HIGHLY PHOTOCONDUCTIVE AMORPHOUS SILICON BY RF SPUTTERING [J].
MOUSTAKAS, TD ;
ANDERSON, DA ;
PAUL, W .
SOLID STATE COMMUNICATIONS, 1977, 23 (03) :155-158
[9]   GLOW-DISCHARGE PRODUCED AMORPHOUS SILICON SOLAR-CELLS [J].
OKAMOTO, H ;
NITTA, Y ;
ADACHI, T ;
HAMAKAWA, Y .
SURFACE SCIENCE, 1979, 86 (JUL) :486-491
[10]   PROPERTIES OF AMORPHOUS HYDROGENATED SILICON, WITH SPECIAL EMPHASIS ON PREPARATION BY SPUTTERING [J].
PAUL, W ;
ANDERSON, DA .
SOLAR ENERGY MATERIALS, 1981, 5 (03) :229-316