X-RAY STUDIES OF SEMICONDUCTOR SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY

被引：27

作者：

TERAUCHI, H

SEKIMOTO, S

KAMIGAKI, K

SAKASHITA, H

SANO, N

KATO, H

NAKAYAMA, M

机构：

[1] Kwansei-Gakuin Univ, Nishinomiya, Jpn, Kwansei-Gakuin Univ, Nishinomiya, Jpn

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1985年 / 54卷 / 12期

关键词：

MOLECULAR BEAM EPITAXY - SEMICONDUCTOR SUPERLATTICES;

D O I：

10.1143/JPSJ.54.4576

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：4576 / 4585

页数：10

共 19 条

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ESAKI L, 1969, IBM RC2418 RES NOT

[7] X-RAY-DIFFRACTION STUDY OF INTER-DIFFUSION AND GROWTH IN (GAAS)N(AIAS)M MULTILAYERS [J].

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[8]

LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

[9] CONTINUOUS 300-K LASER OPERATION OF STRAINED SUPER-LATTICES [J].

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[10] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J].

MATTHEWS, JW ;

BLAKESLEE, AE .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :118-125

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