SI-INDUCED ISLAND FORMATION AND SURFACE ORDERING ON GAAS(001)-C(4X4)

被引:18
作者
AVERY, AR [1 ]
SUDIJONO, J [1 ]
HOLMES, DM [1 ]
JONES, TS [1 ]
JOYCE, BA [1 ]
机构
[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,INTERDISCIPLINARY RES CTR SEMICOND MAT,LONDON SW7 2AY,ENGLAND
关键词
D O I
10.1063/1.113722
中图分类号
O59 [应用物理学];
学科分类号
摘要
Scanning tunneling microscopy (STM) has been used to study the deposition of Si at 400°C onto the c(4×4) surface reconstruction of GaAs(001) surfaces grown in situ by molecular beam epitaxy (MBE). Emphasis is placed on the nucleation, island formation, and surface ordering, as a consequence of adsorption onto the c(4×4) surface. With increasing Si coverage, a series of anisotropic]] needlelike" islands is formed. A site exchange model is proposed in which the deposited Si atoms displace the top layer As atoms of the c(4×4) structure, with the displaced As atoms forming dimers in a new top layer. © 1995 American Institute of Physics.
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收藏
页码:3200 / 3202
页数:3
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