DIRECT OBSERVATION OF SB DIMERS ON INSB(100)-C(4X4)

被引:22
作者
MCCONVILLE, CF
JONES, TS
LEIBSLE, FM
RICHARDSON, NV
机构
[1] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,DEPT CHEM,LONDON SW7 2AY,ENGLAND
[2] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,IRC SEMICOND MAT,LONDON SW7 2AY,ENGLAND
[3] UNIV LIVERPOOL,SURFACE SCI RES CTR,LIVERPOOL L69 3BX,ENGLAND
关键词
D O I
10.1016/0039-6028(94)90773-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Scanning tunneling microscopy (STM) has been used to investigate the structure of the Sb-terminated InSb(100)-c(4 X 4) surface formed by deposition of Sb onto an In-terminated c(8 X 2) surface. Rectangular blocks of three Sb dimers are observed, with the dimer bond aligned along the [011BAR] direction. The images are consistent with a structure based on a missing dimer model, in which a 3/4 monolayer of Sb atoms in the top layer form dimers on top of a full monolayer Sb-terminated surface. Atomically well resolved filled and empty states images of this surface show identical features and indicate that the same species, namely the Sb dimer, is imaged at both negative and positive sample bias.
引用
收藏
页码:L373 / L378
页数:6
相关论文
共 23 条
[1]   SURFACE RECONSTRUCTIONS OF GAAS(100) OBSERVED BY SCANNING TUNNELING MICROSCOPY [J].
BIEGELSEN, DK ;
BRINGANS, RD ;
NORTHRUP, JE ;
SWARTZ, LE .
PHYSICAL REVIEW B, 1990, 41 (09) :5701-5706
[2]   ATOM-RESOLVED IMAGING AND SPECTROSCOPY ON THE GAAS(001) SURFACE USING TUNNELING MICROSCOPY [J].
BRESSLERHILL, V ;
WASSERMEIER, M ;
POND, K ;
MABOUDIAN, R ;
BRIGGS, GAD ;
PETROFF, PM ;
WEINBERG, WH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04) :1881-1885
[3]   THEORY OF DIELECTRIC-FUNCTION ANISOTROPIES OF (001) GAAS (2X1) SURFACES [J].
CHANG, YC ;
ASPNES, DE .
PHYSICAL REVIEW B, 1990, 41 (17) :12002-12012
[4]   A GENERALIZED-MODEL FOR THE RECONSTRUCTION OF (001) SURFACES OF III-V COMPOUND SEMICONDUCTORS BASED ON A RHEED STUDY OF INSB(001) [J].
DEOLIVEIRA, AG ;
PARKER, SD ;
DROOPAD, R ;
JOYCE, BA .
SURFACE SCIENCE, 1990, 227 (1-2) :150-156
[5]   ATOM-SELECTIVE IMAGING OF THE GAAS(110) SURFACE [J].
FEENSTRA, RM ;
STROSCIO, JA ;
TERSOFF, J ;
FEIN, AP .
PHYSICAL REVIEW LETTERS, 1987, 58 (12) :1192-1195
[6]   ON THE ATOMIC-STRUCTURE AND ELECTRONIC-PROPERTIES OF DECAPPED GAAS(001)(2 X 4) SURFACES [J].
GALLAGHER, MC ;
PRINCE, RH ;
WILLIS, RF .
SURFACE SCIENCE, 1992, 275 (1-2) :31-40
[7]   MOLECULAR-BEAM EPITAXIAL-GROWTH MECHANISMS ON THE GAAS(100) SURFACE [J].
HARBISON, JP ;
FARRELL, HH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02) :733-735
[8]   THEORY OF POLAR SEMICONDUCTOR SURFACES [J].
HARRISON, WA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1492-1496
[9]   INSB(100) RECONSTRUCTIONS PROBED WITH CORE-LEVEL PHOTOEMISSION [J].
JOHN, P ;
MILLER, T ;
CHIANG, TC .
PHYSICAL REVIEW B, 1989, 39 (03) :1730-1737
[10]  
JONES RG, 1989, SURF SCI, V208, P1730