STUDY OF DIFFUSION IN THIN AU-CU FILMS

被引：21

作者：

ALESHIN, AN ^{[1
]}

EGOROV, VK ^{[1
]}

BOKSTEIN, BS ^{[1
]}

KURKIN, PV ^{[1
]}

机构：

[1] MOSCOW STEEL & ALLOYS INST,MOSCOW 117936,RUSSIA

来源：

THIN SOLID FILMS | 1993年 / 223卷 / 01期

关键词：

D O I：

10.1016/0040-6090(93)90726-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Temperature dependences of the volume and grain boundary diffusion coefficients of copper and gold were obtained from Rutherford backscattering spectrometry (RBS) investigations of multilayer Cu-Au targets. The annealing of films was carried out in vacuum in the temperature range from 448 to 523 K. All stages of annealing of the film targets were tested by He+ RBS (E0 = 1.5 MeV), and element depth concentration profiles were interpreted on the basis of the Whipple theory and Gilmer-Farrell analysis. Grain boundary diffusion coefficients and the corresponding Arrhenius parameters were obtained.

引用

页码：51 / 55

页数：5

共 17 条

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