OPTICALLY PRODUCED LOCAL SPACE-CHARGE FIELD IN A QUANTUM HETEROSTRUCTURE - TOWARDS AN ALL-OPTICAL THIN-FILM PHOTOREFRACTIVE DEVICE

被引：4

作者：

PELEKANOS, NT

DEVEAUD, B

GRAVEY, P

GERARD, JM

HEBLING, J

KUHL, J

机构：

[1] FRANCE TELECOM,CTR NATL ETUD TELECOMMUN,F-92225 BAGNEUX,FRANCE

[2] MAX PLANCK INST FESTKORPERFORSCH,D-70569 STUTTGART,GERMANY

来源：

OPTICAL MATERIALS | 1995年 / 4卷 / 2-3期

关键词：

D O I：

10.1016/0925-3467(94)00087-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We propose a novel quantum heterostructure especially designed to be used as a thin film photorefractive device without the need of electrical contacts. In the bright fringes of an incident interference pattern, a substantial space charge field perpendicular to the quantum well plane is established in every period of the heterostructure, due to efficient photocarrier separation occuring in GaAs/AlAs quantum filters. This optically produced electric field influences the optical constants in the wavelength region of a quantum well exciton resonance via the Quantum Confined Stark Effect, thus creating an index and absorption grating. We present results which show clear evidence of a photoinduced electric field of about 30 kV/cm with optical excitation of approximately 50 W/cm(2) at room temperature.

引用

收藏

页码：358 / 361

页数：4

相关论文

共 11 条

[1] NONLINEAR ABSORPTION IN N-I-P-I MQW STRUCTURES [J].

ANDO, H ;

IWAMURA, H ;

OOHASHI, H ;

KANBE, H .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (10) :2135-2141

[2]

DOHLER GH, 1990, OPT QUANT ELECTRON, V22, pS121

[3] EXPERIMENTAL-STUDY OF THE GAMMA-X ELECTRON-TRANSFER IN TYPE-II (AL,GA)AS/ALAS SUPERLATTICES AND MULTIPLE-QUANTUM-WELL STRUCTURES [J].

FELDMANN, J ;

NUNNENKAMP, J ;

PETER, G ;

GOBEL, E ;

KUHL, J ;

PLOOG, K ;

DAWSON, P ;

FOXON, CT .

PHYSICAL REVIEW B, 1990, 42 (09) :5809-5821

[4]

KOST A, 1990, OPT QUANT ELECTRON, V22, pS187

[5] ELECTRIC-FIELD DEPENDENCE OF OPTICAL-ABSORPTION NEAR THE BAND-GAP OF QUANTUM-WELL STRUCTURES [J].

MILLER, DAB ;

CHEMLA, DS ;

DAMEN, TC ;

GOSSARD, AC ;

WIEGMANN, W ;

WOOD, TH ;

BURRUS, CA .

PHYSICAL REVIEW B, 1985, 32 (02) :1043-1060

[6] SELF-ORGANIZED GROWTH OF REGULAR NANOMETER-SCALE INAS DOTS ON GAAS [J].

MOISON, JM ;

HOUZAY, F ;

BARTHE, F ;

LEPRINCE, L ;

ANDRE, E ;

VATEL, O .

APPLIED PHYSICS LETTERS, 1994, 64 (02) :196-198

[7] CR-DOPED GAAS/ALGAAS SEMIINSULATING MULTIPLE QUANTUM-WELL PHOTOREFRACTIVE DEVICES [J].

PARTOVI, A ;

GLASS, AM ;

OLSON, DH ;

ZYDZIK, GJ ;

OBRYAN, HM ;

CHIU, TH ;

KNOX, WH .

APPLIED PHYSICS LETTERS, 1993, 62 (05) :464-466

[8] THERMIONIC EMISSION AND GAUSSIAN TRANSPORT OF HOLES IN A GAAS/ALXGA1-XAS MULTIPLE-QUANTUM-WELL STRUCTURE [J].

SCHNEIDER, H ;

VONKLITZING, K .

PHYSICAL REVIEW B, 1988, 38 (09) :6160-6165

[9] MEASUREMENT OF THE EXCITON-FORMATION TIME AND THE ELECTRON-TUNNELING AND HOLE-TUNNELING TIMES IN A DOUBLE-QUANTUM-WELL STRUCTURE [J].

STROBEL, R ;

ECCLESTON, R ;

KUHL, J ;

KOHLER, K .

PHYSICAL REVIEW B, 1991, 43 (15) :12564-12570

[10] STARK SHIFTS IN GAAS/GAALAS QUANTUM-WELLS STUDIED BY PHOTOLUMINESCENCE SPECTROSCOPY [J].

VINA, L ;

MENDEZ, EE ;

WANG, WI ;

CHANG, LL ;

ESAKI, L .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1987, 20 (18) :2803-2815