EFFECT OF OVERLAYER THICKNESS ON ELECTRON-EMISSION FROM SI=CS-O NEA SURFACES

被引：8

作者：

CLARK, MG

HOWORTH, JR

HOLTOM, R

机构：

[1] ENGLISH ELECT VALVE CO LTD,CHELMSFORD CM1 2QU,ESSEX,ENGLAND

[2] ROY SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1976年 / 9卷 / 14期

关键词：

D O I：

10.1088/0022-3727/9/14/023

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2155 / &

共 35 条

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INKSON, JC .

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[4] INTERPRETATION OF SURFACE BOUNDARY-CONDITIONS IN DIFFUSION-MODEL FOR NEA PHOTOEMISSION [J].

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[5] ELECTRONIC-STRUCTURE OF ACTIVATING LAYER IN III-V - CS-O NEGATIVE-ELECTRON-AFFINITY PHOTOEMITTERS [J].

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[6]

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[9] LEED, AUGER AND PLASMON STUDIES OF NEGATIVE ELECTRON AFFINITY ON SI PRODUCED BY ADSORPTION OF CS AND O [J].

GOLDSTEI.B .

SURFACE SCIENCE, 1973, 35 (01) :227-245

[10] LEED-AUGER CHARACTERIZATION OF GAAS DURING ACTIVATION TO NEGATIVE ELECTRON AFFINITY BY ADSORPTION OF CS AND O [J].

GOLDSTEIN, B .

SURFACE SCIENCE, 1975, 47 (01) :143-161

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