学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
INTERPRETATION OF SURFACE BOUNDARY-CONDITIONS IN DIFFUSION-MODEL FOR NEA PHOTOEMISSION
被引:13
作者
:
CLARK, MG
论文数:
0
引用数:
0
h-index:
0
机构:
MINIST DEF,ROY SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
MINIST DEF,ROY SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
CLARK, MG
[
1
]
机构
:
[1]
MINIST DEF,ROY SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
来源
:
JOURNAL OF PHYSICS D-APPLIED PHYSICS
|
1976年
/ 9卷
/ 14期
关键词
:
D O I
:
10.1088/0022-3727/9/14/022
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:2139 / 2153
页数:15
相关论文
共 33 条
[1]
ELECTRON LIFETIME AND DIFFUSION CONSTANT IN GERMANIUM-DOPED GALLIUM-ARSENIDE
ACKET, GA
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
ACKET, GA
NIJMAN, W
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
NIJMAN, W
LAM, HT
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
LAM, HT
[J].
JOURNAL OF APPLIED PHYSICS,
1974,
45
(07)
: 3033
-
3040
[2]
PERFORMANCE OF NEGATIVE ELECTRON AFFINITY PHOTOCATHODES
ALLEN, GA
论文数:
0
引用数:
0
h-index:
0
ALLEN, GA
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1971,
4
(02)
: 308
-
&
[3]
IMPROVED GAAS TRANSMISSION PHOTOCATHODE
ALLENSON, MB
论文数:
0
引用数:
0
h-index:
0
ALLENSON, MB
ROWLAND, MC
论文数:
0
引用数:
0
h-index:
0
ROWLAND, MC
STEWARD, GJ
论文数:
0
引用数:
0
h-index:
0
STEWARD, GJ
SYMS, CHA
论文数:
0
引用数:
0
h-index:
0
SYMS, CHA
KING, PGR
论文数:
0
引用数:
0
h-index:
0
KING, PGR
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1972,
5
(10)
: L89
-
&
[4]
OPERATION OF III-V SEMICONDUCTOR PHOTOCATHODES IN SEMITRANSPARENT MODE
ANTYPAS, GA
论文数:
0
引用数:
0
h-index:
0
ANTYPAS, GA
JAMES, LW
论文数:
0
引用数:
0
h-index:
0
JAMES, LW
UEBBING, JJ
论文数:
0
引用数:
0
h-index:
0
UEBBING, JJ
[J].
JOURNAL OF APPLIED PHYSICS,
1970,
41
(07)
: 2888
-
&
[5]
GLASS-SEALED GAAS-ALGAAS TRANSMISSION PHOTOCATHODE
ANTYPAS, GA
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP RES LABS,PALO ALTO,CA 94303
VARIAN ASSOC,CORP RES LABS,PALO ALTO,CA 94303
ANTYPAS, GA
EDGECUMBE, J
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP RES LABS,PALO ALTO,CA 94303
VARIAN ASSOC,CORP RES LABS,PALO ALTO,CA 94303
EDGECUMBE, J
[J].
APPLIED PHYSICS LETTERS,
1975,
26
(07)
: 371
-
372
[6]
MONTE-CARLO SIMULATION OF CURRENT TRANSPORT IN FORWARD-BIASED SCHOTTKY-BARRIER DIODES
论文数:
引用数:
h-index:
机构:
BACCARANI, G
MAZZONE, AM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV BOLOGNA,IST ELETTR,BOLOGNA,ITALY
MAZZONE, AM
[J].
ELECTRONICS LETTERS,
1976,
12
(02)
: 59
-
60
[7]
BELL RL, 1973, NEGATIVE ELECTRON AF
[8]
EFFECT OF GAAS ELECTRONIC-STRUCTURE ON PERFORMANCE OF GAAS-(CS,O) PHOTOEMITTER
BURT, MG
论文数:
0
引用数:
0
h-index:
0
机构:
CAVENDISH LAB,MADINGLEY RD,CAMBRIDGE CB3 OHE,ENGLAND
CAVENDISH LAB,MADINGLEY RD,CAMBRIDGE CB3 OHE,ENGLAND
BURT, MG
INKSON, JC
论文数:
0
引用数:
0
h-index:
0
机构:
CAVENDISH LAB,MADINGLEY RD,CAMBRIDGE CB3 OHE,ENGLAND
CAVENDISH LAB,MADINGLEY RD,CAMBRIDGE CB3 OHE,ENGLAND
INKSON, JC
[J].
APPLIED PHYSICS LETTERS,
1976,
28
(01)
: 5
-
6
[9]
STUDY OF EMISSION FROM (1,1,1) FACES OF GAAS NEGATIVE ELECTRON AFFINITY PHOTOEMITTERS
BURT, MG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAMBRIDGE,CAVENDISH LAB,DEPT PHYS,MADINGLEY RD,CAMBRIDGE CB3 0HE,ENGLAND
UNIV CAMBRIDGE,CAVENDISH LAB,DEPT PHYS,MADINGLEY RD,CAMBRIDGE CB3 0HE,ENGLAND
BURT, MG
INKSON, JC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAMBRIDGE,CAVENDISH LAB,DEPT PHYS,MADINGLEY RD,CAMBRIDGE CB3 0HE,ENGLAND
UNIV CAMBRIDGE,CAVENDISH LAB,DEPT PHYS,MADINGLEY RD,CAMBRIDGE CB3 0HE,ENGLAND
INKSON, JC
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1976,
9
(01)
: 43
-
53
[10]
EMISSION FROM (1,1,0) FACE OF NEGATIVE-ELECTRON AFFINITY GALLIUM-ARSENIDE
BURT, MG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAMBRIDGE,CAVENDISH LAB,DEPT PHYS,MADINGLEY RD,CAMBRIDGE CB2 0HE,ENGLAND
UNIV CAMBRIDGE,CAVENDISH LAB,DEPT PHYS,MADINGLEY RD,CAMBRIDGE CB2 0HE,ENGLAND
BURT, MG
INKSON, JC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAMBRIDGE,CAVENDISH LAB,DEPT PHYS,MADINGLEY RD,CAMBRIDGE CB2 0HE,ENGLAND
UNIV CAMBRIDGE,CAVENDISH LAB,DEPT PHYS,MADINGLEY RD,CAMBRIDGE CB2 0HE,ENGLAND
INKSON, JC
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1976,
9
(01)
: L5
-
L7
←
1
2
3
4
→
共 33 条
[1]
ELECTRON LIFETIME AND DIFFUSION CONSTANT IN GERMANIUM-DOPED GALLIUM-ARSENIDE
ACKET, GA
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
ACKET, GA
NIJMAN, W
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
NIJMAN, W
LAM, HT
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
LAM, HT
[J].
JOURNAL OF APPLIED PHYSICS,
1974,
45
(07)
: 3033
-
3040
[2]
PERFORMANCE OF NEGATIVE ELECTRON AFFINITY PHOTOCATHODES
ALLEN, GA
论文数:
0
引用数:
0
h-index:
0
ALLEN, GA
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1971,
4
(02)
: 308
-
&
[3]
IMPROVED GAAS TRANSMISSION PHOTOCATHODE
ALLENSON, MB
论文数:
0
引用数:
0
h-index:
0
ALLENSON, MB
ROWLAND, MC
论文数:
0
引用数:
0
h-index:
0
ROWLAND, MC
STEWARD, GJ
论文数:
0
引用数:
0
h-index:
0
STEWARD, GJ
SYMS, CHA
论文数:
0
引用数:
0
h-index:
0
SYMS, CHA
KING, PGR
论文数:
0
引用数:
0
h-index:
0
KING, PGR
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1972,
5
(10)
: L89
-
&
[4]
OPERATION OF III-V SEMICONDUCTOR PHOTOCATHODES IN SEMITRANSPARENT MODE
ANTYPAS, GA
论文数:
0
引用数:
0
h-index:
0
ANTYPAS, GA
JAMES, LW
论文数:
0
引用数:
0
h-index:
0
JAMES, LW
UEBBING, JJ
论文数:
0
引用数:
0
h-index:
0
UEBBING, JJ
[J].
JOURNAL OF APPLIED PHYSICS,
1970,
41
(07)
: 2888
-
&
[5]
GLASS-SEALED GAAS-ALGAAS TRANSMISSION PHOTOCATHODE
ANTYPAS, GA
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP RES LABS,PALO ALTO,CA 94303
VARIAN ASSOC,CORP RES LABS,PALO ALTO,CA 94303
ANTYPAS, GA
EDGECUMBE, J
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP RES LABS,PALO ALTO,CA 94303
VARIAN ASSOC,CORP RES LABS,PALO ALTO,CA 94303
EDGECUMBE, J
[J].
APPLIED PHYSICS LETTERS,
1975,
26
(07)
: 371
-
372
[6]
MONTE-CARLO SIMULATION OF CURRENT TRANSPORT IN FORWARD-BIASED SCHOTTKY-BARRIER DIODES
论文数:
引用数:
h-index:
机构:
BACCARANI, G
MAZZONE, AM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV BOLOGNA,IST ELETTR,BOLOGNA,ITALY
MAZZONE, AM
[J].
ELECTRONICS LETTERS,
1976,
12
(02)
: 59
-
60
[7]
BELL RL, 1973, NEGATIVE ELECTRON AF
[8]
EFFECT OF GAAS ELECTRONIC-STRUCTURE ON PERFORMANCE OF GAAS-(CS,O) PHOTOEMITTER
BURT, MG
论文数:
0
引用数:
0
h-index:
0
机构:
CAVENDISH LAB,MADINGLEY RD,CAMBRIDGE CB3 OHE,ENGLAND
CAVENDISH LAB,MADINGLEY RD,CAMBRIDGE CB3 OHE,ENGLAND
BURT, MG
INKSON, JC
论文数:
0
引用数:
0
h-index:
0
机构:
CAVENDISH LAB,MADINGLEY RD,CAMBRIDGE CB3 OHE,ENGLAND
CAVENDISH LAB,MADINGLEY RD,CAMBRIDGE CB3 OHE,ENGLAND
INKSON, JC
[J].
APPLIED PHYSICS LETTERS,
1976,
28
(01)
: 5
-
6
[9]
STUDY OF EMISSION FROM (1,1,1) FACES OF GAAS NEGATIVE ELECTRON AFFINITY PHOTOEMITTERS
BURT, MG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAMBRIDGE,CAVENDISH LAB,DEPT PHYS,MADINGLEY RD,CAMBRIDGE CB3 0HE,ENGLAND
UNIV CAMBRIDGE,CAVENDISH LAB,DEPT PHYS,MADINGLEY RD,CAMBRIDGE CB3 0HE,ENGLAND
BURT, MG
INKSON, JC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAMBRIDGE,CAVENDISH LAB,DEPT PHYS,MADINGLEY RD,CAMBRIDGE CB3 0HE,ENGLAND
UNIV CAMBRIDGE,CAVENDISH LAB,DEPT PHYS,MADINGLEY RD,CAMBRIDGE CB3 0HE,ENGLAND
INKSON, JC
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1976,
9
(01)
: 43
-
53
[10]
EMISSION FROM (1,1,0) FACE OF NEGATIVE-ELECTRON AFFINITY GALLIUM-ARSENIDE
BURT, MG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAMBRIDGE,CAVENDISH LAB,DEPT PHYS,MADINGLEY RD,CAMBRIDGE CB2 0HE,ENGLAND
UNIV CAMBRIDGE,CAVENDISH LAB,DEPT PHYS,MADINGLEY RD,CAMBRIDGE CB2 0HE,ENGLAND
BURT, MG
INKSON, JC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAMBRIDGE,CAVENDISH LAB,DEPT PHYS,MADINGLEY RD,CAMBRIDGE CB2 0HE,ENGLAND
UNIV CAMBRIDGE,CAVENDISH LAB,DEPT PHYS,MADINGLEY RD,CAMBRIDGE CB2 0HE,ENGLAND
INKSON, JC
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1976,
9
(01)
: L5
-
L7
←
1
2
3
4
→