EPITAXIAL-GROWTH OF SN ON SI(111) - A DIRECT ATOMIC-STRUCTURE DETERMINATION OF THE (2-SQUARE-ROOT-3X2-SQUARE-ROOT-3)R30-DEGREES RECONSTRUCTED SURFACE

被引：43

作者：

TORNEVIK, C

HAMMAR, M

NILSSON, NG

FLODSTROM, SA

机构：

[1] Department of Physics, Materials Science, Royal Institute of Technology

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.44.13144

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Scanning tunneling microscopy (STM) has been used to determine the surface atomic structure of Si(111) (2 square-root 3 x 2 square-root 3)-Sn. The topographic images show four resolved atoms in each (2 square-root 3 x 2 square-root 3) unit cell, and the structure is found to be onefold symmetric. Together with coverage measurements, the STM analysis implies that the reconstructed surface is an epitaxial Sn two-layer structure, where the atoms adopt a bonding configuration characteristic of alpha-Sn. A three-dimensional structure model, in accordance with the obtained results, is proposed.

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页码：13144 / 13147

页数：4

相关论文

共 16 条

[1] STRUCTURE AND STABILITY OF METASTABLE ALPHA-SN [J].

ASOM, MT ;

KORTAN, AR ;

KIMERLING, LC ;

FARROW, RC .

APPLIED PHYSICS LETTERS, 1989, 55 (14) :1439-1441

[2] THE STRUCTURE OF THE SI(111)(SQUARE-ROOT3XSQUARE-ROOT3)R30-DEGREES-SN SURFACE DETERMINED USING X-RAY-DIFFRACTION [J].

CONWAY, KM ;

MACDONALD, JE ;

NORRIS, C ;

VLIEG, E ;

VANDERVEEN, JF .

SURFACE SCIENCE, 1989, 215 (03) :555-565

[3] STUDIES OF MONOLAYERS OF LEAD AND TIN ON SI(111) SURFACES [J].

ESTRUP, PJ ;

MORRISON, J .

SURFACE SCIENCE, 1964, 2 :465-472

[4] DIRECT-GAP GROUP-IV SEMICONDUCTORS BASED ON TIN [J].

GOODMAN, CHL .

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1982, 129 (05) :189-192

[5] BAND STRUCTURE OF GRAY TIN [J].

GROVES, S ;

PAUL, W .

PHYSICAL REVIEW LETTERS, 1963, 11 (05) :194-&

[6] PHOTOELECTRON-SPECTROSCOPY OF SURFACE-STATES ON SEMICONDUCTOR SURFACES [J].

HANSSON, GV ;

UHRBERG, RIG .

SURFACE SCIENCE REPORTS, 1988, 9 (5-6) :197-292

[7] STRUCTURAL STUDY OF ULTRATHIN SN LAYERS DEPOSITED ONTO GE(111) AND SI(111) SURFACES BY RHEED [J].

ICHIKAWA, T .

SURFACE SCIENCE, 1984, 140 (01) :37-63

[8] ANGLE-RESOLVED PHOTOELECTRON-SPECTROSCOPY STUDY OF THE SI(111) SQUARE-ROOT-3X-SQUARE-ROOT-3-SN SURFACE - COMPARISON WITH SI(111) SQUARE-ROOT-3X-SQUARE-ROOT-3-AL, SQUARE-ROOT-3X-SQUARE-ROOT-3-GA, AND SQUARE-ROOT-3XSQUARE-ROOT-3-IN SURFACES [J].

KINOSHITA, T ;

KONO, S ;

SAGAWA, T .

PHYSICAL REVIEW B, 1986, 34 (04) :3011-3014

[9] EMPTY-ELECTRONIC AND FILLED-ELECTRONIC STATES OF THE SI(111)-SQUARE-ROOT-3 X SQUARE-ROOT-3-SN, SQUARE-ROOT-3 X SQUARE-ROOT-3-IN AND 2-SQUARE-ROOT-3 X 2-SQUARE-ROOT-3-SN SURFACES [J].

KINOSHITA, T ;

OHTA, H ;

ENTA, Y ;

YAEGASHI, Y ;

SUZUKI, S ;

KONO, S .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1987, 56 (11) :4015-4021

[10] ADATOMS ON SI(111) AND GE(111) SURFACES [J].

MEADE, RD ;

VANDERBILT, D .

PHYSICAL REVIEW B, 1989, 40 (06) :3905-3913