ADMITTANCE-FREQUENCY RESPONSE IN ZINC-OXIDE VARISTOR CERAMICS

被引：65

作者：

ALIM, MA

机构：

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1989年 / 72卷 / 01期

关键词：

D O I：

10.1111/j.1151-2916.1989.tb05948.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 [材料科学与工程]; 080502 [材料学];

摘要：

引用

页码：28 / 32

页数：5

共 31 条

[1]

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[2]

COMPLEX-PLANE ANALYSIS OF TRAPPING PHENOMENA IN ZINC-OXIDE BASED VARISTOR GRAIN-BOUNDARIES [J].

ALIM, MA ;

SEITZ, MA ;

HIRTHE, RW .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (07) :2337-2345

[3]

ALIM MA, 1988, J AM CERAM SOC, V71, pC246, DOI 10.1111/j.1151-2916.1988.tb05069.x

[4]

Blatter G., 1985, Polycrystalline Semiconductors: Physical Properties and Applications. Proceedings of the International School of Materials Science and Technology, P118

[5]

Broniatowski A., 1985, Polycrystalline Semiconductors: Physical Properties and Applications. Proceedings of the International School of Materials Science and Technology, P95

[6]

Dispersion and absorption in dielectrics I. Alternating current characteristics [J].