SILICON-HYDROGEN BONDING AND HYDROGEN DIFFUSION IN AMORPHOUS-SILICON

被引：66

作者：

VAN DE WALLE, CG

STREET, RA

机构：

[1] Xerox Palo Alto Research Center, Palo Alto, CA 94304

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.51.10615

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The mechanisms for hydrogen diffusion in amorphous silicon are investigated in the context of first-principles results for silicon-hydrogen interactions. For quantities such as the hydrogen chemical potential and the Si-H bond energy, a comparison between theory and experiment provides insight into the microscopic structures as well as the basics of the diffusion process. © 1995 The American Physical Society.

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页码：10615 / 10618

页数：4

相关论文

共 20 条

[1] MULTIPLE-QUANTUM NMR-STUDY OF CLUSTERING IN HYDROGENATED AMORPHOUS-SILICON [J].

BAUM, J ;

GLEASON, KK ;

PINES, A ;

GARROWAY, AN ;

REIMER, JA .

PHYSICAL REVIEW LETTERS, 1986, 56 (13) :1377-1380

[2] STRUCTURE OF HYDROGENATED AMORPHOUS-SILICON FROM ABINITIO MOLECULAR-DYNAMICS [J].

BUDA, F ;

CHIAROTTI, GL ;

CAR, R ;

PARRINELLO, M .

PHYSICAL REVIEW B, 1991, 44 (11) :5908-5911

[3] SIMS ANALYSIS OF DEUTERIUM DIFFUSION IN HYDROGENATED AMORPHOUS SILICON [J].

CARLSON, DE ;

MAGEE, CW .

APPLIED PHYSICS LETTERS, 1978, 33 (01) :81-83

[4]

HERRING C, 1991, SEMICONDUCT SEMIMET, V34, P225

[5] HYDROGEN TRANSPORT IN AMORPHOUS-SILICON [J].

JACKSON, WB ;

TSAI, CC .

PHYSICAL REVIEW B, 1992, 45 (12) :6564-6580

[6]

JACKSON WB, 1989, ADV DISORDERED SEM A, V1, P247

[7] GLASSY QUASITHERMAL DISTRIBUTION OF LOCAL GEOMETRIES AND DEFECTS IN QUENCHED AMORPHOUS-SILICON [J].

KELIRES, PC ;

TERSOFF, J .

PHYSICAL REVIEW LETTERS, 1988, 61 (05) :562-565

[8] ANALYTIC SOLUTION OF TRAP-CONTROLLED TRACER DIFFUSION IN AMORPHOUS SOLIDS [J].

KEMP, M ;

BRANZ, HM .

PHYSICAL REVIEW B, 1993, 47 (12) :7067-7070

[9] LIGHT-ENHANCED HYDROGEN MOTION IN A-SI-H [J].

SANTOS, PV ;

JOHNSON, NM ;

STREET, RA .

PHYSICAL REVIEW LETTERS, 1991, 67 (19) :2686-2689

[10] TRAP-LIMITED HYDROGEN DIFFUSION IN A-SI-H [J].

SANTOS, PV ;

JACKSON, WB .

PHYSICAL REVIEW B, 1992, 46 (08) :4595-4606