COUNTING OF DEEP-LEVEL TRAPS USING A CHARGE-COUPLED DEVICE

被引：71

作者：

MCGRATH, RD

DOTY, J

LUPINO, G

RICKER, G

VALLERGA, J

机构：

[1] TEXAS INSTRUMENTS INC,DALLAS,TX 75265

[2] MIT,CTR SPACE RES,CAMBRIDGE,MA 02139

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 12期

关键词：

D O I：

10.1109/T-ED.1987.23348

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2555 / 2557

页数：3

共 8 条

[1]

Grove A S, 1967, PHYS TECHNOLOGY SEMI

[2] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].

HALL, RN .

PHYSICAL REVIEW, 1952, 87 (02) :387-387

[3] VIRTUAL PHASE TECHNOLOGY - A NEW APPROACH TO FABRICATION OF LARGE-AREA CCDS [J].

HYNECEK, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (05) :483-489

[4]

JOHNSON NM, 1986, P MATER RES SOC S, V69, P75

[5] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J].

NICOLLIA.EH ;

GOETZBER.A .

BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06) :1055-+

[6] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].

SAH, CT ;

NOYCE, RN ;

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243

[7] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].

SHOCKLEY, W ;

READ, WT .

PHYSICAL REVIEW, 1952, 87 (05) :835-842

[8]

SZE SM, 1981, PHYSICS SEMICONDUCTO

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