ELECTRODEPOSITION OF CADMIUM TELLURIDE USING PHOSPHINE TELLURIDE

被引：46

作者：

DARKOWSKI, A

COCIVERA, M

机构：

[1] Univ of Guelph, Guelph-Waterloo Cent, ro Graduate Work in chemistry,, Guelph, Ont, Can, Univ of Guelph, Guelph-Waterloo Cent ro Graduate Work in chemistry, Guelph, Ont, Can

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 11期

关键词：

SEMICONDUCTING FILMS - Growth;

D O I：

10.1149/1.2113661

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Cadmium telluride is electrodeposited on a titanium cathode in a new process that employs tri-n-butylphosphine telluride and cadmium ion dissolved inpropylene carbonate at about 100 degree C. Smooth gray films have been obtained with thicknesses up to 5. 4 mu m. The Te/Cd atomic ratio depends on applied potential and solution composition with values ranging between 0. 63 and 1. 1. X-ray data indicate that the as-deposited film is amorphous but becomes polycrystalline (cubic) upon annealing at 400 degree C. The as-deposited film can be deposited as either p or n type, and heat-treatment converts p to n.

引用

页码：2768 / 2771

页数：4

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