GROWTH OF CUGAS2 BY ALTERNATING-SOURCE-FEEDING MOVPE

被引：13

作者：

OTOMA, H

HONDA, T

HARA, K

YOSHINO, J

KUKIMOTO, H

机构：

[1] Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Midori-ku, Yokohama, 227

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 115卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90850-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The thickness uniformity of CuGaS2 layers grown by metalorganic vapor phase epitaxy has been improved by adopting an alternating source feeding procedure. The observed saturating behavior of the growth rate has been discussed in conjunction with atomic layer epitaxy and other growth mechanisms.

引用

页码：807 / 810

页数：4

共 5 条

[1] EPITAXIAL-GROWTH OF CUGAS2 BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].