FORMATION OF SILICON-CARBIDE CLUSTER CATIONS AND THEIR REACTION WITH ACETYLENE - UNUSUAL BEHAVIOR OF THE DISILICON CARBIDE IONS
被引:18
作者:
PARENT, DC
论文数: 0引用数: 0
h-index: 0
PARENT, DC
机构:
来源:
INTERNATIONAL JOURNAL OF MASS SPECTROMETRY AND ION PROCESSES
|
1992年
/
116卷
/
03期
关键词:
SILICON CARBIDE CATION CLUSTERS;
KINETICS;
D O I:
10.1016/0168-1176(92)80044-2
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
O56 [分子物理学、原子物理学];
学科分类号:
070203 ;
070304 ;
081704 ;
1406 ;
摘要:
Formation of silicon carbide cation clusters (SiC(y)+, y = 0-12 and Si2Cy+, y = 0-11) by direct laser vaporization is reported. The reactions with acetylene were studied in a Fourier transform ion cyclotron resonance mass spectrometer, and product branching ratios and rate constants are tabulated. Monosilicon carbide cations react similarly to pure carbon clusters to add C2H at a rate approximately half Langevin. These results are interpreted as favoring a linear Si-C(y)+ structure possessing a reactive carbene site. Disilicon carbide cations exhibit unusual non-linear kinetics: at first reacting slowly to add CH2, followed by an increase in reactivity and adduct formation. Carbon-13 labeling studies reveal that the Si2Cy+ (y > l) reactant ions undergo carbon exchange with acetylene, catalyzing cleavage of the carbon-carbon triple bond!