A V-BAND HIGH-EFFICIENCY PSEUDOMORPHIC HEMT MONOLITHIC POWER-AMPLIFIER

被引：12

作者：

SHARMA, AK

ONAK, GP

LAI, R

TAN, KL

机构：

[1] The authors are with TRW, Space and Electronics Group, Electronic Systems and Technology Division, Redondo Beach, CA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1994年 / 42卷 / 12期

关键词：

D O I：

10.1109/22.339803

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a high-power and high-efficiency monolithic power amplifier at V-band utilizing highly reliable and manufacturable 0.15 mu m InGaAs/AlGaAs/GaAs pseudomorphic HEMT fabrication technology. The performance of the power amplifier is 13.8 dB small signal gain, 13.9% power-added efficiency, and 26.83 dBm (482 mW) compressed power output at 60 GHz for unpassivated HEMT process. The same circuit with passivated process produced a linear gain of 13.2 dB, 11% power- added efficiency, and compressed output power of 25.68 dBm (370 mW). The producibility of this amplifier has been demonstrated in volume production with several wafer lots resulting in a 20% total yield through RF tests.

引用

页码：2603 / 2609

页数：7

共 12 条

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[9]

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[10]

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