V-BAND GAAS MMIC LOW-NOISE AND POWER-AMPLIFIERS

被引：16

作者：

HUNG, HLA

HEGAZI, GM

LEE, TT

PHELLEPS, FR

SINGER, JL

HUANG, HC

机构：

[1] COMSAT Lab, Clarksburg, MD, USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1988年 / 36卷 / 12期

关键词：

Monolithic Microwave Integrated Circuits - V Band;

D O I：

10.1109/22.17441

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1966 / 1975

页数：10

共 14 条

[1]

BERENZ J, 1987, JUN P IEEE MICR MILL, P15

[2] DESIGN OF MICROWAVE GAAS-MESFETS FOR BROAD-BAND LOW-NOISE AMPLIFIERS [J].

FUKUI, H .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1979, 27 (07) :643-650

[3]

HEGAZI G, 1988, MAY IEEE MTT S S DIG, P409

[4] MICROWAVE PERFORMANCE OF A QUARTER-MICROMETER GATE LOW-NOISE PSEUDOMORPHIC INGAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTOR [J].

HENDERSON, T ;

AKSUN, MI ;

PENG, CK ;

MORKOC, H ;

CHAO, PC ;

SMITH, PM ;

DUH, KHG ;

LESTER, LF .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) :649-651

[5]

HUNG HL, 1987, OCT IEEE GAAS IC S, P239

[6]

HUNG HL, 1988, MICROWAVE J JUN, P177

[7]

HUNG HLA, 1988, MAY IEEE MICR MILL W, P87

[8]

HUNG HLA, 1987, JUN IEEE MICR MILL W, P97

[9]

KIM B, 1987, MICROWAVE J MAR, P153

[10] MILLIMETER-WAVE GAAS POWER FET WITH A PULSE-DOPED INGAAS CHANNEL [J].

KIM, BM ;

SHIH, HD ;

WURTELE, M ;

TSERNG, HQ .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (05) :203-204

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