MILLIMETER-WAVE GAAS POWER FET WITH A PULSE-DOPED INGAAS CHANNEL

被引：14

作者：

KIM, BM

SHIH, HD

WURTELE, M

TSERNG, HQ

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 05期

关键词：

D O I：

10.1109/55.690

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：203 / 204

页数：2

共 7 条

[1]

DAMBKES H, 1983 GAAS IC S, P153

[2] MILLIMETER-WAVE GAAS-FETS PREPARED BY MBE [J].

KIM, B ;

TSERNG, HQ ;

SHIH, HD .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (01) :1-2

[3] GAAS POWER MESFET WITH 41-PERCENT POWER-ADDED EFFICIENCY AT 35 GHZ [J].

KIM, B ;

WURTELE, M ;

SHIH, HD ;

TSERNG, HQ .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (02) :57-58

[4]

PUSTAI J, 1987, MICROWAVES RF, V26, P125

[5] HIGH-EFFICIENCY MILLIMETER-WAVE GAAS/GAALAS POWER HEMTS [J].

SAUNIER, P ;

LEE, JW .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) :503-505

[6]

Smith P. M., 1985, Proceedings of the IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits (Cat. No.85CH2173-3), P189

[7]

SMITH PM, 1987 IEEE MTT S, P749

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