STRUCTURE OF STACKING-FAULTS FORMED IN PAIRS IN A ZNSE EPITAXIAL LAYER ON A GAAS(001) BUFFER LAYER

被引：33

作者：

TANIMURA, J ^{[1
]}

WADA, O ^{[1
]}

OGAMA, T ^{[1
]}

ENDOH, Y ^{[1
]}

IMAIZUMI, M ^{[1
]}

机构：

[1] MITSUBISHI ELECTR CORP,SEMICOND RES LAB,AMAGASAKI,HYOGO 661,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 12期

关键词：

D O I：

10.1063/1.359152

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Structure of stacking faults formed in pairs in a ZnSe epitaxial layer grown by gas source molecular beam epitaxy on a GaAs(001) buffer layer was determined with transmission electron microscopy. Extrinsic type stacking faults were formed on (111) and (1̄1̄1) planes with the same polarity, which was determined by convergent-beam electron diffraction. The two stacking faults meet at a point which is a few atomic layers away from the interface between ZnSe and GaAs. Partial dislocations at the edge of the stacking faults were found to be the Shockley type ones with a Burgers vector of 1/6〈211〉. Probable formation processes of the stacking faults have been discussed. © 1995 American Institute of Physics.

引用

页码：6223 / 6227

页数：5

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