DEPENDENCE OF THRESHOLD FIELD ON INTERVALLEY SEPARATION IN TRANSFERRED ELECTRON OSCILLATORS

被引：8

作者：

BUTCHER, PN

FAWCETT, W

HILSUM, C

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1966年 / ED13卷 / 01期

关键词：

D O I：

10.1109/T-ED.1966.15657

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：192 / &

共 9 条

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BUTCHER, PN ;

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[3] INTERVALLEY TRANSFER MECHANISM OF NEGATIVE RESISTIVITY IN BULK SEMICONDUCTORS [J].

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FAWCETT, W .

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[4] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J].

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[5] TRANSFERRED ELECTRON AMPLIFIERS AND OSCILLATORS [J].

HILSUM, C .

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[6] MECHANISM OF GUNN EFFECT FROM A PRESSURE EXPERIMENT [J].

HUTSON, AR ;

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FELDMAN, WL .

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[7]

KING GSD, PRIVATE COMMUNICATIO

[8]

STRATTON R, 1958, P PHYS SOC LONDON, VA246, P406

[9]

WASSE MP, PRIVATE COMMUNICATIO

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