INITIAL-STAGE OF GROWTH OF THE GD A-SI-H

被引：5

作者：

KOCKA, J

VANECEK, M

STUCHLIK, J

KUBELIK, I

SIPEK, E

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1983年 / 59-6卷 / DEC期

关键词：

D O I：

10.1016/0022-3093(83)90283-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：763 / 766

页数：4

共 6 条

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[2]

HIROSE M, 1982, US JAPAN PALO ALTO M

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STUCHLIK, J ;

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SLOVECKIJ, DI ;

OVSYANNIKOV, AA .

SOLID STATE COMMUNICATIONS, 1983, 45 (08) :763-765

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STREET, RA .

PHYSICAL REVIEW B, 1983, 27 (08) :4924-4932

[5] EFFECT OF ANNEALING ON THE OPTICAL-PROPERTIES OF PLASMA DEPOSITED AMORPHOUS HYDROGENATED SILICON [J].

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[6] PSEUDOGAP STATE DENSITY IN SPUTTERED A-SI-H FROM FIELD-EFFECT AND CAPACITANCE MEASUREMENTS [J].

WEISFIELD, R ;

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ANDERSON, DA ;

PAUL, W .

APPLIED PHYSICS LETTERS, 1981, 39 (03) :263-265

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