PSEUDOGAP STATE DENSITY IN SPUTTERED A-SI-H FROM FIELD-EFFECT AND CAPACITANCE MEASUREMENTS

被引：29

作者：

WEISFIELD, R

VIKTOROVITCH, P

ANDERSON, DA

PAUL, W

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 03期

关键词：

D O I：

10.1063/1.92666

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：263 / 265

页数：3

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[5] INTERPRETATION OF THE CONDUCTANCE AND CAPACITANCE FREQUENCY-DEPENDENCE OF HYDROGENATED AMORPHOUS-SILICON SCHOTTKY-BARRIER DIODES
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[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4847 - 4854
[6] BULK AND SURFACE-STATES ANALYSIS IN A-SI-H BY SCHOTTKY AND MIS TUNNEL-DIODES CAPACITANCE AND CONDUCTANCE MEASUREMENTS
VIKTOROVITCH, P
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) : 1392 - 1404
[7] VIKTOROVITCH P, 1981, 9TH P INT C AM LIQ S
[8] WEISFIELD R, UNPUBLISHED