EXCESS NOISE IN SELECTED FIELD-EFFECT TRANSISTORS

被引：12

作者：

LLACER, J ^{[1
]}

MEIER, DF ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY, LAWRENCE BERKELEY LAB, DEPT ELECTR ENGN, BERKELEY, CA 94720 USA

来源：

关键词：

D O I：

10.1109/TNS.1977.4328696

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：317 / 326

页数：10

共 11 条

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CHURCHILL, MJ
LAURITZEN, PO
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (10) : 985 - +
[2] AN OPTO-ELECTRONIC FEEDBACK PREAMPLIFIER FOR HIGH-RESOLUTION NUCLEAR SPECTROSCOPY
GOULDING, FS
WALTON, J
MALONE, DF
[J]. NUCLEAR INSTRUMENTS & METHODS, 1969, 71 (03): : 273 - &
[3] HIATT LF, 1975, IEEE T ELECTRON DEV, V22, P614
[4] LANDIS DA, 1976, COMMUNICATION
[5] ACCURATE MEASUREMENT OF NOISE PARAMETERS IN ULTRALOW NOISE OPTO-FEEDBACK SPECTROMETER SYSTEMS
LLACER, J
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (05) : 2033 - 2052
[6] MILNES AG, 1973, DEEP IMPURITIES SEMI, pCH1
[7] MORDKOVICH VN, 1964, SOV PHYS-SOL STATE, V6, P654
[8] RADEKA V, 1968, SEP INT S NUCL EL VE
[9] THEORY OF LOW-FREQUENCY GENERATION NOISE IN JUNCTION-GATE FIELD-EFFECT TRANSISTORS
SAH, CT
[J]. PROCEEDINGS OF THE IEEE, 1964, 52 (07) : 795 - +
[10] VANDERZIEL A, 1962, P IRE, V50, P1808