Reduction of the C54-TiSi2 phase transformation temperature using refractory metal ion implantation

被引：107

作者：

Mann, RW ^{[1
]}

Miles, GL ^{[1
]}

Knotts, TA ^{[1
]}

Rakowski, DW ^{[1
]}

Clevenger, LA ^{[1
]}

Harper, JME ^{[1
]}

DHeurle, FM ^{[1
]}

Cabral, C ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 25期

关键词：

D O I：

10.1063/1.115364

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report that the ion implantation of a small dose of Mo into a silicon substrate before the deposition of a thin film of Ti lowers the temperature required to form the commercially important low resistivity C54-TiSi2 phase by 100-150 degrees C. A lesser improvement is obtained with W implantation. In addition, a sharp reduction in the dependence of C54 formation on the geometrical size of the silicided structure is observed. The enhancement in C54 formation observed with the ion implantation of Mo is not explained by ion mixing of the Ti/Si interface or implant-induced damage. Rather, it is attributed to an enhanced nucleation of C54-TiSi2 out of the precursor high resistance C49-TiSi2 phase. (C) 1995 American Institute of Physics.

引用

页码：3729 / 3731

页数：3

共 16 条

[1] METASTABLE PHASE FORMATION IN TITANIUM-SILICON THIN-FILMS [J].