THE FUNDAMENTAL ABSORPTION-EDGE OF LIINSE2

被引:16
作者
HORIG, W [1 ]
NEUMANN, H [1 ]
KUHN, G [1 ]
机构
[1] KARL MARX UNIV,WISSENSCH BEREICH KRISTALLOG,SEKT PHYS,DDR-7010 LEIPZIG,GER DEM REP
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1984年 / 121卷 / 01期
关键词
D O I
10.1002/pssb.2221210159
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:K55 / K58
页数:4
相关论文
共 6 条
[1]  
Johnson E. J., 1967, SEMICONDUCTORS SEMIM, V3, P153
[2]   ANNEALING EFFECTS ON ELECTRICAL-PROPERTIES OF LILNSE2 [J].
KAMIJOH, T ;
KURIYAMA, K .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :1102-1103
[3]   SINGLE-CRYSTAL GROWTH AND CHARACTERIZATION OF LIINSE2 [J].
KAMIJOH, T ;
KURIYAMA, K .
JOURNAL OF CRYSTAL GROWTH, 1981, 51 (01) :6-10
[4]  
Pankove J. I, 1975, OPTICAL PROCESSES SE
[5]   LIINSE2 THIN EPITAXIAL-FILMS ON (111)A-ORIENTED GAAS [J].
TEMPEL, A ;
SCHUMANN, B ;
MITARAY, S ;
KUHN, G .
THIN SOLID FILMS, 1983, 101 (04) :339-344
[6]  
UNGER K, 1980, SEMICONDUCTOR OPTOEL