LIINSE2 THIN EPITAXIAL-FILMS ON (111)A-ORIENTED GAAS

被引：10

作者：

TEMPEL, A

SCHUMANN, B

MITARAY, S

KUHN, G

机构：

来源：

THIN SOLID FILMS | 1983年 / 101卷 / 04期

关键词：

CRYSTALS - Epitaxial Growth - ELECTRONS - Diffraction;

D O I：

10.1016/0040-6090(83)90100-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

LiInSe//2 Thin epitaxial layers were prepared by flash evaporation on 111 direction A-oriented GaAs Substrates and investigated by reflection high energy electron diffraction. The overgrowth is characterized by one-dimensional epitaxy with preferred azimuthal orientation. In general, the LiInSe//2 thin films crystallize in the beta -NaFeO//2 structure. In the substrate temperature range from 620 to 670 K a second phase with chalcopyrite structure was observed besides the beta -NaFeO//2 structure.

引用

页码：339 / 344

页数：6

共 10 条

[1]

BERNARD M, 1975, J PHYS FRANCE, V36, P1

[2]

HOTTMANN H, 1974, THESIS LEIPZIG

[3] SINGLE-CRYSTAL GROWTH OF LILNS2 [J].