DETERMINATION OF LATTICE-PARAMETERS AT THIN EPITAXIAL LAYERS BY RHEED

被引：8

作者：

TEMPEL, A

SCHUMANN, B

机构：

来源：

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY | 1979年 / 14卷 / 05期

关键词：

D O I：

10.1002/crat.19790140510

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A simple method is described for measurement of lattice parameters of thin heteroepitaxial layers by RHEED technique using the substrate as a calibration substance. Results are presented for special cases of I–III–VI2 chalcopyrite type semiconductor epilayers on GaAs substrates. The accuracy of the method is in the order of about 5 · 10−3. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：571 / 574

页数：4

共 5 条

[1] GROWTH AND ELECTRICAL-PROPERTIES OF EPITAXIAL CUINS2 THIN-FILMS ON GAAS SUBSTRATES [J].

NEUMANN, H ;

SCHUMANN, B ;

PETERS, D ;

TEMPEL, A ;

KUHN, G .

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1979, 14 (04) :379-388

[2] EPITAXIAL LAYERS OF CUINSE2 ON GAAS [J].

SCHUMANN, B ;

GEORGI, C ;

TEMPEL, A ;

KUHN, G ;

VANNAM, N ;

NEUMANN, H ;

HORIG, W .

THIN SOLID FILMS, 1978, 52 (01) :45-52

[3] STRUCTURAL AND ELECTRICAL-PROPERTIES OF CUGASE2 THIN-FILMS ON GAAS SUBSTRATES [J].

SCHUMANN, B ;

TEMPEL, A ;

KUHN, G ;

NEUMANN, H ;

NAM, NV ;

HANSEL, T .

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1978, 13 (11) :1285-1295

[4]

SCHUMANN B, UNPUBLISHED

[5]

Shay J. L., 1975, TERNARY CHALCOPYRITE

← 1 →