BULK ELECTRONIC-STRUCTURE OF SILICON STUDIED WITH ANGLE-RESOLVED PHOTOEMISSION FROM THE SI(100)2X1 SURFACE

被引:25
作者
JOHANSSON, LSO
PERSSON, PES
KARLSSON, UO
UHRBERG, RIG
机构
[1] LINKOPING INST TECHNOL,DEPT PHYS & MEASUREMENT TECHNOL,S-58183 LINKOPING,SWEDEN
[2] UNIV LUND,MAX LAB SYNCHROTRON RADIAT GRP,S-22100 LUND,SWEDEN
[3] LINKOPING INST TECHNOL,DEPT PHYS & MEASUREMENT TECHNOL,S-58183 LINKOPING,SWEDEN
来源
PHYSICAL REVIEW B | 1990年 / 42卷 / 14期
关键词
D O I
10.1103/PhysRevB.42.8991
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The bulk band structure of silicon along the symmetry line in the Brillouin zone has been studied with polarization-dependent angle-resolved photoemission from the Si(100)2×1 surface. Normal-emission photoelectron spectra were recorded in the photon-energy range 730 eV. Bulk direct transitions from the three uppermost valence bands to four different final bands are identified in the spectra. The experimental final bands are in good agreement with calculated conduction bands from a linearized augmented-plane-wave calculation. The experimental energies of the X4, 12, and 2 critical points were found to be -3.1+0.2, 8.5+0.3, and 15.8+0.5 eV, respectively. For further comparison between experiment and theory, normal-emission photoelectron spectra were calculated based on the three-step model. Most of the structures in the theoretical spectra are identified also in the experimental spectra. Apart from the direct transitions, also peaks due to nondirect and surface-umklapp scattered transitions were found in the experimental spectra, originating from k points with a high density of states, near the X and L symmetry points. At low photon energies a dispersive peak was also found, which could not be assigned to an allowed final band in the theoretical band structure for normal emission. © 1990 The American Physical Society.
引用
收藏
页码:8991 / 8999
页数:9
相关论文
共 39 条
  • [1] ELECTRONIC-STRUCTURE OF GE(111) AND GE(111)-H FROM ANGLE-RESOLVED PHOTOEMISSION MEASUREMENTS
    BRINGANS, RD
    HOCHST, H
    [J]. PHYSICAL REVIEW B, 1982, 25 (02): : 1081 - 1089
  • [2] SURFACE AND BULK ELECTRONIC-STRUCTURE OF GE(111) C(2X8) AND GE(111)-AS 1X1
    BRINGANS, RD
    UHRBERG, RIG
    BACHRACH, RZ
    [J]. PHYSICAL REVIEW B, 1986, 34 (04): : 2373 - 2380
  • [3] VALENCE-BAND AND CONDUCTION-BAND DENSITIES OF STATES FOR TETRAHEDRAL SEMICONDUCTORS - THEORY AND EXPERIMENT
    CHELIKOWSKY, JR
    WAGENER, TJ
    WEAVER, JH
    JIN, A
    [J]. PHYSICAL REVIEW B, 1989, 40 (14): : 9644 - 9651
  • [4] ANGLE-RESOLVED PHOTOEMISSION-STUDIES OF GAAS(100) SURFACES GROWN BY MOLECULAR-BEAM EPITAXY
    CHIANG, TC
    LUDEKE, R
    AONO, M
    LANDGREN, G
    HIMPSEL, FJ
    EASTMAN, DE
    [J]. PHYSICAL REVIEW B, 1983, 27 (08): : 4770 - 4778
  • [5] ANGLE-RESOLVED PHOTOEMISSION, VALENCE-BAND DISPERSIONS E(K-]), AND ELECTRON AND HOLE LIFETIMES FOR GAAS
    CHIANG, TC
    KNAPP, JA
    AONO, M
    EASTMAN, DE
    [J]. PHYSICAL REVIEW B, 1980, 21 (08): : 3513 - 3522
  • [6] EBERHARDT W, 1980, PHYS REV B, V21, P5572, DOI 10.1103/PhysRevB.21.5572
  • [7] AN OPTIMIZED BEAM LINE AND EXPERIMENTAL STATION FOR ANGLE RESOLVED PHOTOEMISSION BETWEEN 5 EV LESS-THAN-OR-EQUAL-TO HV LESS-THAN-OR-EQUAL-TO 50 EV
    FELDMANN, CA
    ENGELHARDT, R
    PERMIEN, T
    KOCH, EE
    SAILE, V
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 208 (1-3): : 785 - 789
  • [8] ANGLE-RESOLVED PHOTOEMISSION FROM SI(100) - DIRECT VERSUS INDIRECT TRANSITIONS
    GOLDMANN, A
    KOKE, P
    MONCH, W
    WOLFGARTEN, G
    POLLMANN, J
    [J]. SURFACE SCIENCE, 1986, 169 (2-3) : 438 - 450
  • [9] EXPLICIT LOCAL EXCHANGE-CORRELATION POTENTIALS
    HEDIN, L
    LUNDQVIS.BI
    [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (14): : 2064 - &
  • [10] FINAL-STATE SYMMETRY AND POLARIZATION EFFECTS IN ANGLE-RESOLVED PHOTOEMISSION SPECTROSCOPY
    HERMANSON, J
    [J]. SOLID STATE COMMUNICATIONS, 1977, 22 (01) : 9 - 11