ON THE DEPENDENCE OF PHOTOLUMINESCENCE LIFETIME ON EMISSION ENERGY IN POROUS SILICON AT VARIOUS TEMPERATURES

被引：12

作者：

OOKUBO, N ^{[1
]}

HAMADA, N ^{[1
]}

SAWADA, S ^{[1
]}

机构：

[1] KAGOSHIMA UNIV, FAC ENGN, KAGOSHIMA 850, JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1994年 / 92卷 / 04期

关键词：

DISORDERED SYSTEMS; NANOSTRUCTURES; ELECTRONIC STATES (LOCALIZED); LUMINESCENCE;

D O I：

10.1016/0038-1098(94)90720-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Photoluminescence (PL) decay of porous silicon as a function of emission energies E(PL) is studied at temperatures 20-293 K to investigate why the PL lifetime decreases exponentially with increasing E(PL) at room temperature. We find that this exponential decrease gets less prominent with decreasing temperature and almost disappears below about 70K. The PL lifetime at room temperature is thus implied to be affected greatly by thermally activated hopping of carriers, as qualitatively shown using luminescence dynamics on localized states in the porous cluster model.

引用

收藏

页码：369 / 373

页数：5

相关论文

共 25 条

[1] THE ORIGIN OF VISIBLE LUMINESCENCE FROM POROUS SILICON - A NEW INTERPRETATION [J].

BRANDT, MS ;

FUCHS, HD ;

STUTZMANN, M ;

WEBER, J ;

CARDONA, M .

SOLID STATE COMMUNICATIONS, 1992, 81 (04) :307-312

[2] PHOTOLUMINESCENCE OF HIGH POROSITY AND OF ELECTROCHEMICALLY OXIDIZED POROUS SILICON LAYERS [J].

BSIESY, A ;

VIAL, JC ;

GASPARD, F ;

HERINO, R ;

LIGEON, M ;

MULLER, F ;

ROMESTAIN, R ;

WASIELA, A ;

HALIMAOUI, A ;

BOMCHIL, G .

SURFACE SCIENCE, 1991, 254 (1-3) :195-200

[3] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[4] VISIBLE-LIGHT EMISSION DUE TO QUANTUM SIZE EFFECTS IN HIGHLY POROUS CRYSTALLINE SILICON [J].

CULLIS, AG ;

CANHAM, LT .

NATURE, 1991, 353 (6342) :335-338

[5] SILOXENE - CHEMICAL QUANTUM CONFINEMENT DUE TO OXYGEN IN A SILICON MATRIX [J].

DEAK, P ;

ROSENBAUER, M ;

STUTZMANN, M ;

WEBER, J ;

BRANDT, MS .

PHYSICAL REVIEW LETTERS, 1992, 69 (17) :2531-2534

[6] ENERGY GAP LAW FOR RADIATIONLESS TRANSITIONS IN LARGE MOLECULES [J].

ENGLMAN, R ;

JORTNER, J .

MOLECULAR PHYSICS, 1970, 18 (02) :145-+

[7] EVIDENCE FOR QUANTUM CONFINEMENT IN THE PHOTOLUMINESCENCE OF POROUS SI AND SIGE [J].

GARDELIS, S ;

RIMMER, JS ;

DAWSON, P ;

HAMILTON, B ;

KUBIAK, RA ;

WHALL, TE ;

PARKER, EHC .

APPLIED PHYSICS LETTERS, 1991, 59 (17) :2118-2120

[8] MICROSTRUCTURAL INVESTIGATIONS OF LIGHT-EMITTING POROUS SI LAYERS [J].

GEORGE, T ;

ANDERSON, MS ;

PIKE, WT ;

LIN, TL ;

FATHAUER, RW ;

JUNG, KH ;

KWONG, DL .

APPLIED PHYSICS LETTERS, 1992, 60 (19) :2359-2361

[9] SLOW DECAY DYNAMICS OF VISIBLE LUMINESCENCE IN POROUS SILICON - HOPPING OF CARRIERS CONFINED ON A SHELL REGION IN NANOMETER-SIZE SI CRYSTALLITES [J].

KANEMITSU, Y .

PHYSICAL REVIEW B, 1993, 48 (16) :12357-12360

[10]

KOCH F, 1993, MAT RES S C, V283, P197, DOI 10.1557/PROC-283-197