DENSITY OF IMPURITY STATES ASSOCIATED WITH INVERSION-LAYERS

被引：8

作者：

LIMA, ICD

DASILVA, AF

GUIMARAES, PS

PERONDI, LF

SENNA, JR

机构：

来源：

PHYSICAL REVIEW B | 1985年 / 32卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.32.2371

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2371 / 2377

页数：7

共 15 条

[1]

ABRAHAMS E, 1979, PHYS REV LETT, V43, P718

[2]

ADLER B, 1968, METHODS COMPUTATIONA, V8

[3] WEAK LOCALIZATION IN THIN-FILMS - A TIME-OF-FLIGHT EXPERIMENT WITH CONDUCTION ELECTRONS [J].

BERGMANN, G .

PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 1984, 107 (01) :1-58

[4] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J].

FANG, FF ;

FOWLER, AB .

PHYSICAL REVIEW, 1968, 169 (03) :619-+

[5] IMPURITY BANDS IN INVERSION-LAYERS [J].

FOWLER, AB ;

HARTSTEIN, A .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (06) :949-959

[6]

HARTSTEIN A, 1983, B AM PHYS SOC, V28, P322

[7] ELECTRONIC-STRUCTURE OF LIQUID-METALS IN TIGHT-BINDING APPROXIMATION .1. SINGLE-SITE THEORY FOR A QUASI-ORTHOGONAL SET OF ATOMIC ORBITALS [J].

ISHIDA, Y ;

YONEZAWA, F .

PROGRESS OF THEORETICAL PHYSICS, 1973, 49 (03) :731-753

[8] TWO-DIMENSIONAL IMPURITY BANDS AT SEMICONDUCTOR HETEROSTRUCTURE INTERFACES [J].

LIMA, ICD ;

DASILVA, AF .

PHYSICAL REVIEW B, 1984, 30 (08) :4819-4821

[9]

MAHAN GD, 1981, MANY PARTICLE PHYSIC

[10] THEORY OF IMPURITY BAND CONDUCTION IN SEMICONDUCTORS - AN APPROACH TO RANDOM LATTICE PROBLEM [J].

MATSUBARA, T ;

TOYOZAWA, Y .

PROGRESS OF THEORETICAL PHYSICS, 1961, 26 (05) :739-756

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