TWO-DIMENSIONAL IMPURITY BANDS AT SEMICONDUCTOR HETEROSTRUCTURE INTERFACES

被引:12
作者
LIMA, ICD [1 ]
DASILVA, AF [1 ]
机构
[1] BROWN UNIV,DEPT PHYS,PROVIDENCE,RI 02912
来源
PHYSICAL REVIEW B | 1984年 / 30卷 / 08期
关键词
D O I
10.1103/PhysRevB.30.4819
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:4819 / 4821
页数:3
相关论文
共 9 条
[1]   HUBBARD-MODEL FOR DISORDERED-SYSTEMS - APPLICATION TO THE SPECIFIC-HEAT OF THE PHOSPHORUS-DOPED SILICON [J].
DASILVA, AF ;
KISHORE, R ;
LIMA, ICD .
PHYSICAL REVIEW B, 1981, 23 (08) :4035-4043
[2]  
ECONOMOU EN, 1979, GREENS FUNCTION QUAN
[3]  
HARTSTEIN A, 1977, 13TH P INT C PHYS SE, P741
[4]   ELECTRON AND IMPURITY CORRELATIONS IN DOPED SEMICONDUCTORS [J].
KISHORE, R ;
LIMA, ICD ;
FABBRI, M ;
DASILVA, AF .
PHYSICAL REVIEW B, 1982, 26 (02) :1038-1041
[5]   TWO-DIMENSIONAL DENSITY OF STATES FOR ELECTRONS BOUND TO IMPURITIES INSIDE INVERSION-LAYERS AT THE SEMICONDUCTOR INSULATOR INTERFACE [J].
LIMA, ICD ;
DASILVA, AF ;
FABBRI, M .
SURFACE SCIENCE, 1983, 134 (01) :135-144
[6]   THEORY OF IMPURITY BAND CONDUCTION IN SEMICONDUCTORS - AN APPROACH TO RANDOM LATTICE PROBLEM [J].
MATSUBARA, T ;
TOYOZAWA, Y .
PROGRESS OF THEORETICAL PHYSICS, 1961, 26 (05) :739-756
[7]  
PERONDI LF, UNPUB
[8]   ELECTRON LOCALIZATION IN SPATIALLY DISORDERED-SYSTEMS [J].
PURI, A ;
ODAGAKI, T .
PHYSICAL REVIEW B, 1981, 24 (10) :5541-5546
[9]   PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J].
STERN, F ;
HOWARD, WE .
PHYSICAL REVIEW, 1967, 163 (03) :816-&