ELECTRON AND IMPURITY CORRELATIONS IN DOPED SEMICONDUCTORS

被引：10

作者：

KISHORE, R

LIMA, ICD

FABBRI, M

DASILVA, AF

机构：

来源：

PHYSICAL REVIEW B | 1982年 / 26卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.26.1038

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1038 / 1041

页数：4

共 18 条

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