LOW-TEMPERATURE GROWTH OF SILICON DIOXIDE FILM BY PHOTO-CHEMICAL VAPOR-DEPOSITION

[1] LASER-INDUCED CHEMICAL VAPOR-DEPOSITION OF SIO2 [J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 716 - 719

[2] KLERER J, 1965, J ELECTROCHEM SOC, V112, P505

[3] MISHIMA Y, 1984, 15TH C SOL STAT DEV, P121

[4] Okabe H., 1978, PHOTOCHEMISTRY SMALL, P177

[5] OKUYAMA M, 1983, JPN J APPL PHYS, V23, P97

[6] Peters J. W., 1981, International Electron Devices Meeting, P240

[7] PETERS JW, 1982, ELECTROCHEM SOC M, P324

[1] LASER-INDUCED CHEMICAL VAPOR-DEPOSITION OF SIO2 [J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 716 - 719

[2] KLERER J, 1965, J ELECTROCHEM SOC, V112, P505

[3] MISHIMA Y, 1984, 15TH C SOL STAT DEV, P121

[4] Okabe H., 1978, PHOTOCHEMISTRY SMALL, P177

[5] OKUYAMA M, 1983, JPN J APPL PHYS, V23, P97

[6] Peters J. W., 1981, International Electron Devices Meeting, P240

[7] PETERS JW, 1982, ELECTROCHEM SOC M, P324