HIGH-SPEED WAVE-GUIDE-INTEGRATED PHOTODIODES GROWN BY METAL ORGANIC MOLECULAR-BEAM EPITAXY

被引:13
作者
EMEIS, N
SCHIER, M
HOFFMANN, L
HEINECKE, H
BAUR, B
机构
[1] Siemens Research Laboratories, 8000 München 83
关键词
PHOTODIODES; DIODES; SEMICONDUCTOR DEVICES AND MATERIALS; EPITAXY;
D O I
10.1049/el:19920215
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Using InP/InGaAs layers grown by metal organic molecular beam epitaxy (MOMBE) on semi-insulating (SI) InP substrate we have fabricated waveguide-integrated pin-photodiodes working on the principle of evanescent field coupling. A 3 dB cutoff frequency of 9.6 GHz has been found in a 50-OMEGA system. The 100-mu-m long diodes exhibit a capacitance of < 0.1 pF at -5V bias. In addition design criteria are given to improve the speed of the devices.
引用
收藏
页码:344 / 345
页数:2
相关论文
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